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Ando, Masaki; Nakano, Yoshihiro; Okajima, Shigeaki; Kawasaki, Kenji
JAERI-Research 2003-029, 72 Pages, 2003/12
JAERI-Research-2003-029.pdf:3.41MB
The objectives of this study is to clarify calculation accuracy for the Doppler effect of the resonance materials; erbium (Er), tungsten (W) and thorium (ThO
). Doppler effect measurements were carried out in a fast neutron spectrum (XX-2 core) and in an intermediate neutron spectrum (XXI-1D2 core) by the sample-heated and reactivity worth measurement method up to 800
C using FCA. The experiment was analyzed with the standard analysis method for fast reactor cores at FCA with the use of the JENDL-3.2. The SRAC system was also used to investigate the calculation accuracy of the system and to compare it with that of the FCA standard analysis method. The standard analysis method underestimated for the XX-2 core and agreed the experiments within the experimental errors for the XXI-1D2 core. The analysis with the SRAC system gave smaller values by 3%
10% for the Er sample and bigger values by 2%5% for the W sample than the standard analysis method.
Ando, Masaki; Nakano, Yoshihiro; Okajima, Shigeaki; Kawasaki, Kenji
Journal of Nuclear Materials, 319, p.126 - 130, 2003/06
Times Cited Count：0 Percentile：0.01(Materials Science, Multidisciplinary)Doppler effect experiments on resonance materials for ROX fuels were carried out to examine the calculation accuracy in the intermediate neutron spectrum using Fast Critical Assembly (FCA) at Japan Atomic Energy Research Institute. This study is the second phase of a series of the Doppler effect experiments on the resonance materials, which is following the measurements in the fast neutron spectrum. The Doppler effect was measured as the sample reactivity change between the heated and unheated samples. The cylindrical samples of the resonance materials such as erbium (Er), tungsten (W) and thorium (ThO) were used. The sample was heated up to 800C at the center of the FCA core. The Doppler effect measurements were analyzed using the SRAC 95 code system with the use of JENDL 3.2. The calculated values agreed with the experiment within the experimental error for the W and ThO samples, while the calculation overestimated the experiment for the Er sample about 10 %.
Dai, S.*; Hu, L.*; Sugiyama, Akira; Izawa, Yasukazu*; Liu, Z.*; Jiang, Z.*
Chinese Science Bulletin, 47(3), p.255 - 259, 2002/02
Times Cited Count：7 Percentile：51.71(Multidisciplinary Sciences)A new type of ytterbium doped phosphate laser glass has been produced and studied about physical and optical properties such as thermo-mechanical properties, nonlinear properties, crystalline phase, micro defects and spectroscopic properties. In the glass forming process, newly developed OH removing technology was adopted. From the reduction of OH concentration in the glass, upper state fluorescence lifetime reached 2.2 ms. Additionally, the glass shows remarkable athermal property of 0.42
10E
/K, which is around one-tenth of QX/Yb glass.
Biswal, S.*; F.Druon*; Nees, J.*; G.Mourou*; Nishimura, Akihiko
Conf. on Lasers and Electro-Optics, 11, p.319 - 320, 1997/05
no abstracts in English
Biswal, S.*; F.Druon*; Nishimura, Akihiko; Nees, J.*; G.Mourou*
Technical Digests on CLEO/Pacific Rim'97, P. 15, 1997/00
no abstracts in English
Nees, J.*; G.Mourou*; Biswal, S.*; J.Itatani*; A.C.Tien*; J.C.Chanteloup*; Nishimura, Akihiko; *
Ultrafast Optics 1997, 4 Pages, 1997/00
no abstracts in English
;
Journal of Nuclear Science and Technology, 16(10), p.701 - 710, 1979/10
Times Cited Count：2no abstracts in English
O
film on the sputter-treated SiFujita, Masaya*; Asaoka, Hidehito; Yamaguchi, Kenji
no journal, ,
The ion beam sputter deposition method is capable of fabricating highly-oriented ErO thin film on crystalline Si substrate at 700 
C, by bombarding ErO target with O
ion beam. However, there always exists silicide phase (ErSi) due to direct reaction between sputtered Er atoms and the Si substrate. In order to find ways to prevent, or slow down the reaction of Si with Er, the dependence of the sputter-etching conditions of the substrate, which are conducted prior to deposition to remove surface impurities, on the film crystalline properties was investigated. In the experiment, two sputter-etching conditions, (a) fluence 3.710
ions cm
(normally employed condition) and (b) 3.710
ions cm, were employed. The results of the film structure observed by XRD analysis indicated that the silicide phase was present irrespective of the fluence conditions employed.
